PART |
Description |
Maker |
0475960133 |
0.9144mm (.036) by 0.9144mm (.036) Pitch LGA 1156 Desktop PC CPU Socket,0.76μm (30μ) Gold (Au) Plating, with Pick-and-Place Cover, 1156Circuits, Leadfree
|
Molex Electronics Ltd.
|
SC0365.SERIES 2598 |
SCHOTTKY DIE 036 x 036 mils From old datasheet system
|
International Rectifier
|
FDB3682NL |
100V N-Channel Power Trench MOSFET 32A, 0.036 ohm @ Vgs = 10V, TO-263/D2PAK Package 6 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
HUF75321D3 HUF75321D3S 75321D |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
FDD3682 FDD3682NL |
N-Channel PowerTrench MOSFET, 100V, 32A, 0.036 ohm 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel PowerTrench MOSFET 100V/ 32A/ 36m N-Channel PowerTrench MOSFET 100V, 32A, 36mз N-Channel PowerTrench MOSFET 100V, 32A, 36m?/a>
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
IRHG58110 IRHG53110 IRHG54110 IRHG57110 |
100V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package 100V 300kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package 100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
|
IRF[International Rectifier]
|
SR732ATTDD0.075OHMJ SR732ATTDD0.03OHMJ SR732BTTDD0 |
RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 500 ppm, 0.075 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 800 ppm, 0.03 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.5 W, 5 %, 800 ppm, 0.03 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 800 ppm, 0.039 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 500 ppm, 0.062 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.5 W, 5 %, 800 ppm, 0.043 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 500 ppm, 0.051 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.5 W, 5 %, 800 ppm, 0.033 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.5 W, 5 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 800 ppm, 0.043 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 500 ppm, 0.082 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.5 W, 5 %, 800 ppm, 0.036 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 500 ppm, 0.068 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 500 ppm, 0.056 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 800 ppm, 0.033 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 500 ppm, 0.091 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 800 ppm, 0.036 ohm, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT RESISTOR, CURRENT SENSE, METAL GLAZE/THICK FILM, 0.5 W, 5 %, 800 ppm, 0.039 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
RL-7700-1C-7N5J RL-7700-4C-4R7K RL-7700-2C-36NK RL |
1 ELEMENT, 0.0075 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 4.7 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 0.036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 0.056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 2.7 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 0.043 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 0.047 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 2.2 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 1.2 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 0.082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
RENCO ELECTRONICS INC
|
SLC7649S-500KLB SLC7649S-700KLB SLC7649S-101KLB SL |
Power inductor, shielded, 10% tol, SMT, RoHS 1 ELEMENT, 0.05 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Power inductor, shielded, 10% tol, SMT, RoHS 1 ELEMENT, 0.07 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Power inductor, shielded, 10% tol, SMT, RoHS 1 ELEMENT, 0.1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Power inductor, shielded, 10% tol, SMT, RoHS 1 ELEMENT, 0.036 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Coilcraft, Inc.
|
FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No ; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6) FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 积极的固定电压稳压器 FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45) FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
|
|
CW1XCT52A0.015OHMJ CW1XCT52A0.024OHMJ CW1XCT52A0.0 |
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.024 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.027 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.016 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.036 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.012 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.018 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.043 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 2 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 1 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 0.604 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
|